n-ch p-ch v dss 20v -20v r ds(on) 0.029 w 0.058 w n-channel p-channel drain-source voltage v ds 20 -20 gate-source voltage v gs 12 t a = 25c 6.6 -5.3 t a = 70c 5.3 -4.3 pulsed drain current i dm 26 -21 continuous source current (diode conduction) i s 2.5 -2.5 t a = 25c 2.0 t a = 70c 1.3 single pulse avalanche energy e as 100 150 mj avalanche current i ar 4.1 -2.9 a repetitive avalanche energy e ar 0.20 mj peak diode recovery dv/dt ? dv/dt 5.0 -5.0 v/ ns junction and storage temperature range t j, t stg -55 to + 150 c preliminary hexfet ? power mosfet pd - 9.1568b fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infra red, or wave soldering techniques. 12/9/97 so-8 l generation v technology l ultra low on-resistance l dual n and p channel mosfet l surface mount l fully avalanche rated irf7317 description thermal resistance ratings parameter symbol limit units maximum junction-to-ambient ? r q ja 62.5 c/w continuous drain current ? maximum power dissipation ? a i d p d v w symbol maximum units d1 n-channel mosfet p-channel mosfet d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 absolute maximum ratings ( t a = 25c unless otherwise noted)
irf7317 ? surface mounted on fr-4 board, t 10sec. parameter min. typ. max. units conditions n-ch 20 v gs = 0v, i d = 250a p-ch -20 v gs = 0v, i d = -250a n-ch 0.027 reference to 25c, i d = 1ma p-ch 0.031 reference to 25c, i d = -1ma 0.023 0.029 v gs = 4.5v, i d = 6.0a ? 0.030 0.046 v gs = 2.7v, i d = 5.2a ? 0.049 0.058 v gs = -4.5v, i d = -2.9a ? 0.082 0.098 v gs = -2.7v, i d = -1.5a ? n-ch 0.7 v ds = v gs , i d = 250a p-ch -0.7 v ds = v gs , i d = -250a n-ch 20 v ds = 10v, i d = 6.0a ? p-ch 5.9 v ds = -10v, i d = -1.5a ? n-ch 1.0 v ds = 16v, v gs = 0v p-ch -1.0 v ds = -16v, v gs = 0v n-ch 5.0 v ds = 16v, v gs = 0v, t j = 55c p-ch -25 v ds = -16v, v gs = 0v, t j = 55c i gss gate-to-source forward leakage n-p CC 100 v gs = 12v n-ch 18 27 p-ch 19 29 n-ch 2.2 3.3 p-ch 4.0 6.1 n-ch 6.2 9.3 p-ch 7.7 12 n-ch 8.1 12 p-ch 15 22 n-ch 17 25 p-ch 40 60 n-ch 38 57 p-ch 42 63 n-ch 31 47 p-ch 49 73 n-ch 900 p-ch 780 n-ch 430 pf p-ch 470 n-ch 200 p-ch 240 v (br)dss drain-to-source breakdown voltage d v (br)dss / d t j breakdown voltage temp. coefficient r ds(on) static drain-to-source on-resistance v gs(th) gate threshold voltage g fs forward transconductance i dss drain-to-source leakage current q g total gate charge q gs gate-to-source charge q gd gate-to-drain ("miller") charge t d(on) turn-on delay time t r rise time t d(off) turn-off delay time t f fall time c iss input capacitance c oss output capacitance c rss reverse transfer capacitance electrical characteristics @ t j = 25c (unless otherwise specified) v v/c w v s a nc ns n-channel i d = 6.0a, v ds = 10v, v gs = 4.5v ? p-channel i d = -2.9a, v ds = -16v, v gs = -4.5v n-channel v dd = 10v, i d = 1.0a, r g = 6.0 w, r d = 10 w ? p-channel v dd = -10v, i d = -2.9a, r g = 6.0 w , r d = 3.4 w n-channel v gs = 0v, v ds = 15v, ? = 1.0mhz p-channel v gs = 0v, v ds = -15v, ? = 1.0mhz n-ch p-ch parameter min. typ. max. units conditions n-ch 2.5 p-ch -2.5 n-ch 26 p-ch -21 n-ch 0.72 1.0 t j = 25c, i s = 1.7a, v gs = 0v ? p-ch -0.78 -1.0 t j = 25c, i s = -2.9a, v gs = 0v ? n-ch 52 77 p-ch 47 71 n-ch 58 86 p-ch 49 73 source-drain ratings and characteristics i s continuous source current (body diode) i sm pulsed source current (body diode) ? v sd diode forward voltage t rr reverse recovery time q rr reverse recovery charge a v ns nc n-channel t j = 25c, i f =1.7a, di/dt = 100a/s p-channel ? t j = 25c, i f = -2.9a, di/dt = 100a/s ? n-channel i sd 4.1a, di/dt 92a/s, v dd v (br)dss , t j 150c p-channel i sd -2.9a, di/dt -77a/s, v dd v (br)dss , t j 150c ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 22 ) notes: ? pulse width 300s; duty cycle 2%. ? n-channel starting t j = 25c, l = 12mh r g = 25 w , i as = 4.1a. (see figure 12) p-channel starting t j = 25c, l = 35mh r g = 25 w , i as = -2.9a. na
irf7317 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. typical source-drain diode forward voltage n-channel 1 10 100 0.1 1 10 20s pulse width t = 25 c j top bottom vgs 7.50v 4.50v 4.00v 3.50v 3.00v 2.70v 2.00v 1.50v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 1.50v 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 0.1 1 10 20s pulse width t = 150 c j top bottom vgs 7.50v 4.50v 4.00v 3.50v 3.00v 2.70v 2.00v 1.50v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 1.50v 1 10 100 1.5 2.0 2.5 3.0 v = 10v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
irf7317 fig 5. normalized on-resistance vs. temperature fig 8. maximum avalanche energy vs. drain current fig 6. typical on-resistance vs. drain current fig 7. typical on-resistance vs. gate voltage n-channel r ds (on) , drain-to-source on resistance ( w ) r ds (on) , drain-to-source on resistance ( w ) 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.8a 3.3a 4.1a -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 6.0a 0.01 0.02 0.03 0.04 0.05 02468 a gs v , gate-to-source volta g e ( v ) i = 6.6a d 0.020 0.024 0.028 0.032 0 102030 a i , drain current ( a ) d v = 4.5v gs v = 2.7v gs
irf7317 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage n-channel 0 400 800 1200 1600 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1m hz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 5 10 15 20 25 30 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d 6.0a v = 10v ds 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response)
irf7317 fig 14. typical transfer characteristics fig 13. typical output characteristics fig 12. typical output characteristics fig 15. typical source-drain diode forward voltage p-channel 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v = -10v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 0.1 1 10 20s pulse width t = 25 c j top bottom vgs -7.50v -4.50v -4.00v -3.50v -3.00v -2.70v -2.00v -1.50v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v 0.1 1 10 100 0.1 1 10 20s pulse width t = 150 c j top bottom vgs -7.50v -4.50v -4.00v -3.50v -3.00v -2.70v -2.00v -1.50v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v
irf7317 fig 16. normalized on-resistance vs. temperature fig 19. maximum avalanche energy vs. drain current fig 17. typical on-resistance vs. drain current fig 18. typical on-resistance vs. gate voltage p-channel r ds(on ) , drain-to-source on resistance ( w ) r ds(on) , drain-to-source on resistance ( w ) -i d , drain current (a) 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.3a -2.3a -2.9a 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source o n resistance ds(on) (n orm alized) a i = -2.9a v = -4.5v d gs 0.0 0.2 0.4 0.6 0.8 048121620 a -i , drain current (a) d v = -4.5v gs v = -2.7v gs 0.03 0.04 0.05 0.06 0.07 0.08 0.0 2.0 4.0 6.0 8.0 a gs v , gate-to-source volta g e (v) i = -5.3a d
irf7317 fig 21. typical gate charge vs. gate-to-source voltage fig 20. typical capacitance vs. drain-to-source voltage p-channel fig 22. maximum effective transient thermal impedance, junction-to-ambient - 0 200 400 600 800 1000 1200 1400 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 30 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) i = -2.9a v = -16v d ds 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response)
irf7317 package outline so8 outline so8 part marking information exam ple : this is an irf7101 date code (yw w ) y = last digit of the year w w = w eek w afer lot code (last 4 digits) xxxx bottom part number top international rectifier log o f7101 312 k x 45 c 8x l 8x q h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim inches millimeters min max min max a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 basic 1.27 basic e1 .025 basic 0.635 basic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. dimensions are shown in millimeters (inches). 4. outline conforms to jedec outline ms-012aa. dimension does not include mold protrusions mold protrusions not to exceed 0.25 (.006). dimensions is the length of lead for soldering to a substrate.. 5 6 a1 e1
irf7317 so8 dimensions are shown in millimeters (inches) tape & reel information 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 12/97
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